Fast-Switching GaN-Based Lateral Power Schottky Barrier Diodes With Low Onset Voltage and Strong Reverse Blocking

Author

Bahat-Treidel, E. ; Hilt, Oliver ; Zhytnytska, Rimma ; Wentzel, Andreas ; Meliani, Chafik ; Würfl, Joachim ; Tränkle, Günther

Author_Institution

Ferdinand-Braun-Inst. (FBH), Berlin, Germany

Volume

33

Issue

3

fYear

2012

fDate

3/1/2012 12:00:00 AM

Firstpage

357

Lastpage

359

Abstract

GaN-based heterostructure lateral Schottky barrier diodes (SBDs) grown on n-SiC substrate are investigated in this letter. These SBDs own very low onset voltage V_F = 0.43 V, high reverse blocking V_BR >; 1000 V, very low capacitive charge of 0.213 nC/A, and a very fast recovery time of 10 ps. These unique qualities are achieved by combining lateral topology, GaN:C back-barrier epitaxial structure, fully recessed Schottky anode (φ_B = 0.43 eV), and slanted anode field plate in a robust and innovative process. Diode operation at elevated temperature up to 200 °C was also characterized.

Keywords

III-V semiconductors; Schottky diodes; gallium compounds; power semiconductor diodes; silicon compounds; wide band gap semiconductors; GaN:C; Schottky anode; SiC; back-barrier epitaxial structure; fast switching lateral power Schottky barrier diodes; lateral topology; onset voltage; recovery time; reverse blocking; slanted anode field plate; voltage 0.43 V; Anodes; Capacitance; Gallium nitride; HEMTs; MODFETs; Schottky diodes; Switches; AlGaN/GaN Schottky diode; lateral Schottky diode; recessed Schottky diode;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2179281

Filename

6127896