Title :
Two ±0.7 V S2I class AB differential memory cells
Author :
Grech, I. ; Micallef, J. ; Vladimirova, T.
Author_Institution :
Dept. of Microelectron., Malta Univ., Malta
fDate :
12/7/2000 12:00:00 AM
Abstract :
Two novel class AB sampled switched current memory cells are presented, together with simulation results obtained at a supply voltage of ±0.7 V. These cells exhibit a quiescent current that can be accurately controlled and is independent of the supply voltage. Furthermore, it is ensured that the minimum current passing through the memory transistors is equal to a well defined value, throughout the signal range. The first memory cell is based on a fully-differential architecture, while the second one can be used in single-ended or pseudo-differential circuits
Keywords :
CMOS analogue integrated circuits; analogue processing circuits; analogue storage; circuit feedback; switched current circuits; -0.7 V; 0.7 V; S2I memory cells; class AB differential memory cells; fully-differential architecture; memory transistors; pseudo-differential circuits; quiescent current control; sampled SI memory cell; sampled switched current memory cells; single-ended circuits;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20001480
