Title :
Room temperature operation of GaAsSb/GaAs quantum well VCSELs at 1.29 μm
Author :
Quochi, F. ; Cunningham, J.E. ; Dinu, M. ; Shah, J.
Author_Institution :
Lucent Technol. Bell Labs., Holmdel, NJ, USA
fDate :
12/7/2000 12:00:00 AM
Abstract :
Room temperature pulsed lasing at 1.29 μm in an optically pumped GaAsSb/GaAs quantum well VCSEL on a GaAs substrate is reported. This is the longest wavelength VCSEL reported in this material system
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; laser cavity resonators; laser transitions; optical pumping; quantum well lasers; surface emitting lasers; 1.29 micron; GaAs; GaAs substrate; GaAsSb-GaAs; optically pumped QW VCSEL; quantum well VCSELs; room temperature operation; room temperature pulsed lasing; semiconductor laser; vertical cavity SEL;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20001469
