Title :
HTOL SRAM Vmin shift considerations in scaled HKMG technologies
Author :
Balasubramanian, S. ; Joshi, Vinayak ; Klick, T. ; Mann, R. ; Versaggi, J. ; Gautam, Anjali ; Weintraub, C. ; Kurz, Gerhard ; Krause, G. ; Kerber, Andreas ; Parameshwaran, B. ; Nigam, Tanya
Author_Institution :
Globalfoundries, Santa Clara, CA, USA
Abstract :
This paper examines the role of NBTI and PBTI on SRAM Vmin shifts during HTOL stressing and quantifies their impact on reliability lifetime projections in scaled high-k metal gate (HKMG) technologies. Correlation between measured HTOL SRAM Vmin shifts and transistor level parametrics is summarized on both 28nm poly-SiON and HKMG technologies. The paper concludes that the commonly used HTOL acceleration voltage of 1.4xVnom may be excessive in scaled HKMG technologies due to the larger role of PBTI in SRAMs.
Keywords :
SRAM chips; integrated circuit testing; internal stresses; negative bias temperature instability; polymers; reliability; silicon compounds; transistor circuits; voltage measurement; HKMG technologies; HTOL SRAM; HTOL acceleration voltage; HTOL stressing; NBTI; PBTI; SiON; high temperature operating life; high-k metal gate technologies; reliability lifetime projections; size 28 nm; transistor level parametrics; Correlation; Degradation; Logic gates; Random access memory; Reliability; Stress; Transistors; CMOS; HKMG; HTOL; NBTI; PBTI; SRAM; Vmin; replacement metal gate; scaling;
Conference_Titel :
Custom Integrated Circuits Conference (CICC), 2014 IEEE Proceedings of the
Conference_Location :
San Jose, CA
DOI :
10.1109/CICC.2014.6946031
