• DocumentCode
    1419099
  • Title

    Determination of Laplace-Poisson domain interface within semiconductor devices

  • Author

    Magowan, J.A. ; Ryan, W.D. ; Armstrong, A.

  • Author_Institution
    Queen´´s University of Belfast, Department of Electrical Engineering, Belfast, UK
  • Volume
    117
  • Issue
    5
  • fYear
    1970
  • fDate
    5/1/1970 12:00:00 AM
  • Firstpage
    921
  • Lastpage
    926
  • Abstract
    A method is described for locating the interface boundary between the space-charge-neutral regions in semiconductor devices. This is based on a two-dimensional S.O.R. solution of Poisson´s equation for complete depletion within the space-charge region and Laplace´s equation within the neutral region. Applications of this 2-dimensional analytical technique are considered, and particular reference is made to the junction field-effect transistor and the metal-oxide-silicon transistor.
  • Keywords
    semiconductor devices; space charge;
  • fLanguage
    English
  • Journal_Title
    Electrical Engineers, Proceedings of the Institution of
  • Publisher
    iet
  • ISSN
    0020-3270
  • Type

    jour

  • DOI
    10.1049/piee.1970.0182
  • Filename
    5248874
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1419099