DocumentCode
1419102
Title
Approximation of Range in Materials as a Function of Incident Electron Energy
Author
Wilson, Gregory ; Dennison, J.R.
Author_Institution
Phys. Dept., Utah State Univ., Logan, UT, USA
Volume
40
Issue
2
fYear
2012
Firstpage
291
Lastpage
297
Abstract
A simple composite analytic expression has been developed to approximate the electron range in materials. The expression is applicable over more than six orders of magnitude in energy (<; 10 eV to >; MeV) and range ( 10-9-10-2 m), with an uncertainty of ≤ 20% for most conducting, semiconducting, and insulating materials. This is accomplished by fitting data from two standard NIST databases [ESTAR for the higher energy range and the electron inelastic mean free path (IMFP) for the lower energies]. In turn, these data have been fit with well-established semiempirical models for range and IMFP that are related to standard material properties (e.g., density, atomic number, atomic weight, stoichiometry, and bandgap energy). Simple relations between the IMFP and the range, based on the continuous-slow-down approximation, are used to merge results from the two databases into a composite range expression. A single free parameter, termed the effective number of valence electrons per atom Nv, is used to predict the range over the entire energy span.
Keywords
aerospace engineering; surface charging; ESTAR; continuous-slow-down approximation; electron inelastic mean free path; electron range; incident electron energy; insulating materials; semiconducting materials; simple composite analytic expression; standard NIST database; standard material properties; Approximation methods; Databases; Electron beams; Materials; Mathematical model; NIST; Photonic band gap; Electron scattering; inelastic mean free path (IMFP); range; spacecraft charging;
fLanguage
English
Journal_Title
Plasma Science, IEEE Transactions on
Publisher
ieee
ISSN
0093-3813
Type
jour
DOI
10.1109/TPS.2011.2176515
Filename
6127915
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