DocumentCode :
1419102
Title :
Approximation of Range in Materials as a Function of Incident Electron Energy
Author :
Wilson, Gregory ; Dennison, J.R.
Author_Institution :
Phys. Dept., Utah State Univ., Logan, UT, USA
Volume :
40
Issue :
2
fYear :
2012
Firstpage :
291
Lastpage :
297
Abstract :
A simple composite analytic expression has been developed to approximate the electron range in materials. The expression is applicable over more than six orders of magnitude in energy (<; 10 eV to >; MeV) and range ( 10-9-10-2 m), with an uncertainty of ≤ 20% for most conducting, semiconducting, and insulating materials. This is accomplished by fitting data from two standard NIST databases [ESTAR for the higher energy range and the electron inelastic mean free path (IMFP) for the lower energies]. In turn, these data have been fit with well-established semiempirical models for range and IMFP that are related to standard material properties (e.g., density, atomic number, atomic weight, stoichiometry, and bandgap energy). Simple relations between the IMFP and the range, based on the continuous-slow-down approximation, are used to merge results from the two databases into a composite range expression. A single free parameter, termed the effective number of valence electrons per atom Nv, is used to predict the range over the entire energy span.
Keywords :
aerospace engineering; surface charging; ESTAR; continuous-slow-down approximation; electron inelastic mean free path; electron range; incident electron energy; insulating materials; semiconducting materials; simple composite analytic expression; standard NIST database; standard material properties; Approximation methods; Databases; Electron beams; Materials; Mathematical model; NIST; Photonic band gap; Electron scattering; inelastic mean free path (IMFP); range; spacecraft charging;
fLanguage :
English
Journal_Title :
Plasma Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0093-3813
Type :
jour
DOI :
10.1109/TPS.2011.2176515
Filename :
6127915
Link To Document :
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