DocumentCode :
1419121
Title :
Extremely broadband InGaAsP/InP superluminescent diodes
Author :
Wu, Bing-Ruey ; Lin, Ching-Fuh ; Laih, Lih-Wen ; Shih, Tien-Tsorng
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Volume :
36
Issue :
25
fYear :
2000
fDate :
12/7/2000 12:00:00 AM
Firstpage :
2093
Lastpage :
2095
Abstract :
Record broadband characteristics of superluminescent diodes (SLD) are reported. Using two 87 Å In0.53Ga0.47As quantum wells and three 60 Å In0.67Ga0.33As0.72P0.28 quantum wells, the fabricated SLDs exhibit a very broad emission spectrum. The spectral width is nearly 300 nm, covering the range from 1300 to 1585.5 nm
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical transmitters; semiconductor optical amplifiers; semiconductor quantum wells; superluminescent diodes; 1300 to 1585.5 nm; III-V semiconductors; InGaAsP-InP; SLDs; broadband characteristics; emission spectrum; quantum wells; spectral width; superluminescent diodes;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20001440
Filename :
891842
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1419121
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