• DocumentCode
    1419136
  • Title

    Low-noise metal-insulator-semiconductor UV photodiodes based on GaN

  • Author

    Monroy, E. ; Calle, F. ; Pau, J.L. ; Muñoz, E. ; Omnès, F.

  • Author_Institution
    Dept. de Ingenieria Electron., Univ. Politecnica de Madrid, Spain
  • Volume
    36
  • Issue
    25
  • fYear
    2000
  • fDate
    12/7/2000 12:00:00 AM
  • Firstpage
    2096
  • Lastpage
    2098
  • Abstract
    Au/SiO2/GaN metal-insulator-semiconductor photodiodes have been fabricated on Si-doped GaN epitaxial layers grown on sapphire by metalorganic vapour phase epitaxy. The insertion of a thin SiO2 layer at the metal-semiconductor interface results in a significant decrease in the dark current density, and an increase in the device detectivity by more than an order of magnitude
  • Keywords
    III-V semiconductors; MIS devices; dark conductivity; gallium compounds; gold; photodiodes; semiconductor epitaxial layers; semiconductor growth; silicon compounds; ultraviolet detectors; vapour phase epitaxial growth; Au-SiO2-GaN; Au/SiO2/GaN; dark current density; device detectivity; metal-insulator-semiconductor UV photodiodes; metalorganic vapour phase epitaxy;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20001441
  • Filename
    891844
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1419136