• DocumentCode
    1419172
  • Title

    Investigation into performance of TaN diffusion barrier against copper diffusion using XRD

  • Author

    Teh, W.H.

  • Author_Institution
    Singapore-Massachusetts Inst. of Technol., Singapore
  • Volume
    36
  • Issue
    25
  • fYear
    2000
  • fDate
    12/7/2000 12:00:00 AM
  • Firstpage
    2105
  • Lastpage
    2106
  • Abstract
    A study of the reliability of a multilayer ionised metal plasma Cu/IMP TaN/plasma enhanced chemical vapour deposited SiO2/Si film structure with different thickness of TaN (10-30 nm) is presented. Formation of Cu5Ta11O30 and CuTa10 O26 peaks in the X-ray diffraction analysis when TaN fails suggests diffusion of Cu into oxygen-gettered tantalum. A 30 nm TaN barrier is an effective barrier for the Cu diffusion, sustaining 800°C annealing
  • Keywords
    VLSI; X-ray diffraction; annealing; copper; diffusion barriers; integrated circuit metallisation; integrated circuit reliability; plasma CVD coatings; silicon; silicon compounds; tantalum compounds; 10 to 30 nm; 800 degC; Cu-TaN-SiO2-Si; IC interconnections; IC metallisation; XRD; annealing; deep-submicron ICs; diffusion barrier; ionised metal plasma; plasma enhanced chemical vapour deposition; reliability;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20001466
  • Filename
    891861
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1419172