DocumentCode
1419180
Title
On-wafer determination of intrinsic spontaneous spectrum of vertical cavity surface-emitting devices
Author
Royo, P. ; Stanley, R.P. ; Ilegems, M. ; Streubel, K. ; Gulden, K.H.
Author_Institution
Inst. de Micro- et Optoelectron., Ecole Polytech. Fed. de Lausanne, Switzerland
Volume
36
Issue
25
fYear
2000
fDate
12/7/2000 12:00:00 AM
Firstpage
2106
Lastpage
2108
Abstract
A simple method for determining the intrinsic spontaneous spectrum of vertical cavity surface-emitting devices is presented. The procedure is based on angle-resolved measurements of the top-emission spectra and comparison with numerical simulations. It is accurate, nondestructive and easy to implement
Keywords
light emitting diodes; semiconductor lasers; spontaneous emission; surface emitting lasers; angle-resolved measurements; intrinsic spontaneous spectrum; on-wafer determination; top-emission spectra; vertical cavity surface-emitting devices;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20001462
Filename
891863
Link To Document