Investigation of LOCOS- and Polysilicon-Bound Diodes for Robust Electrostatic Discharge (ESD) Applications

Author

Li, You ; Liou, Juin J. ; Vinson, James E. ; Zhang, Lining

Author_Institution

Micro/Nanoelectron. Design Lab., Univ. of Central Florida, Orlando, FL, USA

Volume

57

Issue

4

fYear

2010

fDate

4/1/2010 12:00:00 AM

Firstpage

814

Lastpage

819

Abstract

In this paper, the current-carrying and voltage-clamping capabilities of LOCal Oxidation of Silicon (LOCOS)- and polysilicon-bound diodes are first investigated. Comparison of these capabilities leads to the conclusion that the polysilicon-bound diode is more suited for electrostatic discharge (ESD) protection applications. Then, to achieve an optimal diode structure for ESD applications, the effects of the cathode/anode length, cathode/anode width, polysilicon width, finger number, terminal connection, and metal layout on the polysilicon-bound diode´s ESD robustness are studied and discussed in detail.

Keywords

electrostatic discharge; elemental semiconductors; semiconductor diodes; silicon; LOCOS-bound diodes; Si; anode length; anode width; cathode length; cathode width; diode structure; electrostatic discharge applications; electrostatic discharge protection; finger number; metal layout; polysilicon width; polysilicon-bound diodes; silicon local oxidation; terminal connection; voltage-clamping capabilities; Anodes; Cathodes; Diodes; Electrostatic discharge; Fingers; Oxidation; Protection; Robustness; Silicon; Voltage; on-resistance; Diodes; electrostatic discharge (ESD); failure current;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2009.2039964

Filename

5415624