Title :
Two-port noise and impedance measurements for two-terminal devices with a resonant tunneling diode example
Author :
Przadka, Andreas ; Webb, Kevin J. ; Janes, David B.
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
fDate :
9/1/1998 12:00:00 AM
Abstract :
A two-port technique is presented for determining the circuit elements and noise sources of the equivalent circuit of a two-terminal device at microwave frequencies. The two-terminal device is connected as a two-port so that intrinsic and parasitic circuit elements can be obtained from full two-port S-parameter measurements. This measurement does not require one of the two contacts to be grounded, which makes it particularly well suited for the characterization of integrated devices where parasitic elements become important and cannot be easily calculated. The noise of the device is measured by employing a noise-figure meter and the intrinsic noise is computed from the measured terminal noise. As an example, the impedance and noise elements of a resonant tunneling diode (RTD) are measured over frequency ranges of 2-8 and 2-4 GHz, respectively
Keywords :
S-parameters; electric impedance measurement; electric noise measurement; equivalent circuits; microwave diodes; resonant tunnelling diodes; semiconductor device noise; 2 to 4 GHz; 2 to 8 GHz; S-parameter measurements; equivalent circuit; impedance measurements; intrinsic circuit elements; microwave frequencies; noise-figure meter; parasitic circuit elements; parasitic elements; resonant tunneling diode; terminal noise; two-port noise; two-terminal devices; Circuit noise; Equivalent circuits; Impedance measurement; Integrated circuit measurements; Microwave circuits; Microwave frequencies; Noise measurement; Particle measurements; Resonant tunneling devices; Scattering parameters;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
