A new extrinsic equivalent circuit of HEMT´s including noise for millimeter-wave circuit design

Author

Dambrine, Gilles ; Belquin, Jean-Maxence ; Danneville, Francois ; Cappy, Alain

Author_Institution

Inst. d´´Electron. et de Microelectron. du Nord, CNRS, Villeneuve d´´Ascq, France

Volume

46

Issue

9

fYear

1998

fDate

9/1/1998 12:00:00 AM

Firstpage

1231

Lastpage

1236

Abstract

In this paper, we propose a reliable extrinsic equivalent circuit of a high-performance high electron-mobility transistor (HEMT) to determine both the [S]-parameters and noise parameters in the millimeter-wave range from characterizations performed below 40 GHz. In the case of the conventional equivalent circuits, only three extrinsic elements have to be determined instead of (at least) eight. We show the validity of the proposed extrinsic equivalent circuit by [S]-parameters and noise figure measurements up to the W-band (75-110 GHz). The proposed equivalent circuit is reliable and is very well suited for the design of low-noise integrated circuits for millimeter waves

Keywords

HEMT integrated circuits; S-parameters; equivalent circuits; field effect MIMIC; integrated circuit measurement; integrated circuit noise; 40 to 110 GHz; HEMT; W-band; [S]-parameters; extrinsic equivalent circuit; low-noise integrated circuits; millimeter-wave circuit design; noise figure measurements; noise parameters; Circuit noise; Equivalent circuits; HEMTs; Integrated circuit measurements; MODFETs; Millimeter wave circuits; Millimeter wave measurements; Millimeter wave transistors; Noise figure; Noise measurement;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.709461

Filename

709461