DocumentCode
1419249
Title
Abnormal Dopant Distribution in
-Diffused
Emitter of Textur
Author
Ok, Young-Woo ; Rohatgi, Ajeet ; Kil, Yeon-Ho ; Park, Sung-Eun ; Kim, Dong-Hwan ; Lee, Joon-Sung ; Choi, Chel-Jong
Author_Institution
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Volume
32
Issue
3
fYear
2011
fDate
3/1/2011 12:00:00 AM
Firstpage
351
Lastpage
353
Abstract
We investigated 2-D dopant distribution in a -diffused emitter formed on textured Si solar cells using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and simulation results demonstrate that the convex and concave regions of a pyramid in the textured Si surface show deeper and shallower junctions, respectively. By considering a strong dependence of phosphorus (P) diffusion on the Si interstitials, the abnormal profile of emitter in the textured Si surface could be attributed to the inhomogeneous distribution of Si interstitials caused by the geometry of the pyramid texture.
Keywords
etching; interstitials; nitrogen; phosphorus compounds; semiconductor junctions; solar cells; surface diffusion; surface texture; transmission electron microscopy; 2D dopant distribution; POCl3-N+; Si; TEM; emitter; pyramid texture; selective chemical etching; shallow junctions; textured silicon solar cells; transmission electron microscopy; Junction; Si interstitial; selective chemical etching; solar cells; transmission electron microscopy (TEM);
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2010.2098840
Filename
5680936
Link To Document