DocumentCode :
1419249
Title :
Abnormal Dopant Distribution in 
-Diffused 
Emitter of Textur
Author :
Ok, Young-Woo ; Rohatgi, Ajeet ; Kil, Yeon-Ho ; Park, Sung-Eun ; Kim, Dong-Hwan ; Lee, Joon-Sung ; Choi, Chel-Jong
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Volume :
32
Issue :
3
fYear :
2011
fDate :
3/1/2011 12:00:00 AM
Firstpage :
351
Lastpage :
353
Abstract :
We investigated 2-D dopant distribution in a -diffused emitter formed on textured Si solar cells using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and simulation results demonstrate that the convex and concave regions of a pyramid in the textured Si surface show deeper and shallower junctions, respectively. By considering a strong dependence of phosphorus (P) diffusion on the Si interstitials, the abnormal profile of emitter in the textured Si surface could be attributed to the inhomogeneous distribution of Si interstitials caused by the geometry of the pyramid texture.
Keywords :
etching; interstitials; nitrogen; phosphorus compounds; semiconductor junctions; solar cells; surface diffusion; surface texture; transmission electron microscopy; 2D dopant distribution; POCl3-N+; Si; TEM; emitter; pyramid texture; selective chemical etching; shallow junctions; textured silicon solar cells; transmission electron microscopy; Junction; Si interstitial; selective chemical etching; solar cells; transmission electron microscopy (TEM);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2010.2098840
Filename :
5680936
Link To Document :
