• DocumentCode
    1419249
  • Title

    Abnormal Dopant Distribution in \\hbox {POCl}_{3} -Diffused \\hbox {N}^{+} Emitter of Textur

  • Author

    Ok, Young-Woo ; Rohatgi, Ajeet ; Kil, Yeon-Ho ; Park, Sung-Eun ; Kim, Dong-Hwan ; Lee, Joon-Sung ; Choi, Chel-Jong

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
  • Volume
    32
  • Issue
    3
  • fYear
    2011
  • fDate
    3/1/2011 12:00:00 AM
  • Firstpage
    351
  • Lastpage
    353
  • Abstract
    We investigated 2-D dopant distribution in a -diffused emitter formed on textured Si solar cells using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and simulation results demonstrate that the convex and concave regions of a pyramid in the textured Si surface show deeper and shallower junctions, respectively. By considering a strong dependence of phosphorus (P) diffusion on the Si interstitials, the abnormal profile of emitter in the textured Si surface could be attributed to the inhomogeneous distribution of Si interstitials caused by the geometry of the pyramid texture.
  • Keywords
    etching; interstitials; nitrogen; phosphorus compounds; semiconductor junctions; solar cells; surface diffusion; surface texture; transmission electron microscopy; 2D dopant distribution; POCl3-N+; Si; TEM; emitter; pyramid texture; selective chemical etching; shallow junctions; textured silicon solar cells; transmission electron microscopy; Junction; Si interstitial; selective chemical etching; solar cells; transmission electron microscopy (TEM);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2010.2098840
  • Filename
    5680936