DocumentCode :
1419264
Title :
Correlation Between AlGaN/GaN MISHFET Performance and 
Insulation Layer Quality
Author :
Shi, Junxia ; Eastman, Lester F.
Author_Institution :
Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
Volume :
32
Issue :
3
fYear :
2011
fDate :
3/1/2011 12:00:00 AM
Firstpage :
312
Lastpage :
314
Abstract :
HfO2 films of 15 nm were deposited using atomic layer deposition at temperatures varying from 110°C to 200°C and then to 300°C on AlGaN/GaN HEMT structures. Devices with 300°C HfO2 show dramatically better ON and OFF-state characteristics under dc biases than those with HfO2 deposited at lower temperatures. High-resolution X-ray diffraction, together with X-ray reflectivity measurements, confirms the superior film quality of the 300°C HfO2 in comparison to the lower temperature grown films.
Keywords :
III-V semiconductors; X-ray diffraction; X-ray reflection; aluminium compounds; atomic layer deposition; field effect transistors; gallium compounds; hafnium compounds; insulating thin films; semiconductor heterojunctions; wide band gap semiconductors; AlGaN-GaN; HEMT structures; MISHFET; OFF-state characteristics; ON-state characteristics; X-ray reflectivity; atomic layer deposition; dc biases; film quality; high-resolution X-ray diffraction; insulation layer; size 15 nm; temperature 110 degC to 300 degC; $hbox{HfO}_{2}$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2010.2098839
Filename :
5680938
Link To Document :
