Scaling the Suspended-Gate FET: Impact of Dielectric Charging and Roughness

Suspended gate field-effect transistors (SG-FETs) with switching gates are interesting as digital logic switches because of their high I _on/I _off current ratio and their infinite subthreshold slope. However, the limits of scalability of the SG-FETs are still unclear. This paper investigates two effects that could limit scaling: the dielectric charging and the dielectric roughness. To do so, a surface-potential-based model for suspended gate transistors with a mechanically switching gate is presented and validated using experimental data. Devices fabricated in a standard complimentary metal-oxide-semiconductor process are used for the model assessment. The model reproduces the effect of a fixed charge and the effect of a nonideal contact of the gate after pull-in. We show that, at the device dimensions required to follow the International Technology Roadmap for Semiconductors, these effects will be critical.