Title :
High-Pressure Synthesized Nanostructural
Materials With High Performance of Superconductivity, Suitable for Fault Current Limitation and Other Application
Author :
Prikhna, Tatiana A. ; Gawalek, Wolfgang ; Goldacker, Wilfried ; Savchuk, Yaroslav M. ; Noudem, Jacques ; Soldatov, Alexander ; Eisterer, Mikhael ; Weber, Harald W. ; Sokolovsky, Vladimir ; Serga, Maxim ; Dub, Sergey N. ; Wendt, Michael ; You, Shujie ; Ser
Author_Institution :
Inst. for Superhard Mater., Nat. Acad. of Sci. of Ukraine, Kiev, Ukraine
fDate :
6/1/2011 12:00:00 AM
Abstract :
A variety of samples made via different routes were investigated. Samples are nanostructured (average grain sizes are about 20 nm). The advantage of high-pressure (HP)-manufactured (2 GPa, 800-1050°C, 1 h) MgB2 bulk is the possibility to get almost theoretically dense (1-2% porosity) material with very high critical current densities reaching at 20 K, in 0-1 T jc = 1.2 1.0 · 106 A/cm2 (with 10% SiC doping) and jc = 9.2 - 7.3 105 A/cm2 (without doping). Mechanical properties are also very high: fracture toughness up to 4.4 ± 0.04 MPa · m0.5 and 7.6 ± 2.0 MPa · m0.5 at 148.8 N load for MgB2 undoped and doped with 10% Ta, respectively. The HP-synthesized material at moderate temperature (2 GPa, 600°C, 1 h) from B with high amount of impurity C (3.15%) and H (0.87%) has jc = 103 A/cm2 in 8 T fleld at 20 K, highest irreversibility fields (at 18.4 K Hirr = 15 T) and upper critical fields (at 22 K HC2 = 15 T) but 17% porosity. HP materials with stoichiometry near MgB12 can have Tc = 37 K and jc = 6 · 104 A/cm2 at 0 T and Hirr = 5 T at 20 K. The spark plasma synthesized (SPS) material (50 MPa, 600-1050°C 1.3 h, without additions), demonstrated at 20 K, in 0-1 T jc = 4.5-4 105 A/cm2. Dispersed inclusions of higher magnesium borides, which are usually present in MgB2 structure and obviously create new pinning centers can be revealed by Raman spectroscopy (for the first time a spectrum of MgB2 was obtained). Tests of quench behavior, losses on MgB2 rings and material thermal conductivity show promising properties for fault current limiters. Due to high critical fields, the material can be used for magnets.
Keywords :
Raman spectra; critical current density (superconductivity); doping; fracture toughness; grain size; high-pressure effects; high-temperature superconductors; magnesium compounds; nanofabrication; nanostructured materials; plasma materials processing; porosity; quenching (thermal); silicon compounds; stoichiometry; superconducting critical field; thermal conductivity; MgB2; MgB2:SiC; Raman spectroscopy; critical current density; doping; fault current limitation applications; fracture toughness; grain size; high-pressure synthesized nanostructural materials; impurity; pinning centers; porosity; pressure 2 GPa; pressure 50 MPa; quenching; spark plasma synthesized material; stoichiometry; superconductivity; temperature 18.4 K; temperature 20 K; temperature 600 degC to 1050 degC; thermal conductivity; time 1 h; time 1.3 h; upper critical fields; Boron; Critical current density; Heating; Magnesium; Materials; Plasma temperature; Silicon carbide; Boron compounds; FCL behavior; Raman spectroscopy; magnetic variable measurement; pressure effects; superconducting material growth;
Journal_Title :
Applied Superconductivity, IEEE Transactions on
DOI :
10.1109/TASC.2010.2096494