A high gain operational amplifier via an efficient conductance cancellation technique

Author

Bin Huang ; Degang Chen

Author_Institution

Dept. of Electr. & Comput. Eng., Iowa State Univ., Ames, IA, USA

fYear

2014

fDate

15-17 Sept. 2014

Firstpage

1

Lastpage

4

Abstract

An efficient conductance cancellation method is introduced to achieve high gain operational amplifiers. Without the aid of any tuning circuit, in IBM 130nm CMOS process, the post-layout simulation results show that proposed method is able to maintain a DC gain boost of over 23.2dB under temperatures between -40°C and 80°C, of over 21.1dB under supply voltage between 1.3V and 1.8V, and of over 22.5dB under output voltage swing between 0.1V and 1.3V. The measurement results show that the proposed technique maintains at least 26.4dB DC gain enhancement under output voltage swing between 0.1V and 1.4V, while the power consumption and area overhead of the proposed circuit are respectively less than 2% and 3% of those of the conventional op amps.

Keywords

CMOS integrated circuits; operational amplifiers; CMOS process; DC gain boost; conductance cancellation technique; high gain operational amplifier; power consumption; temperature -40 degC to 80 degC; voltage 0.1 V to 1.3 V; voltage 1.3 V to 1.8 V; Gain; Gain measurement; MOS devices; Operational amplifiers; Transistors; Tuning; Voltage measurement; Conductance cancellation; DC gain; gain enhancement; operational amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference (CICC), 2014 IEEE Proceedings of the

Conference_Location

San Jose, CA

Type

conf

DOI

10.1109/CICC.2014.6946064

Filename

6946064