Title :
Optimization of 10-20 GHz avalanche photodiodes
Author_Institution :
Lucent Technol., Bell Lab., Murray Hill, NJ, USA
Abstract :
Calculations are presented on the optimization of the high-frequency response of superlattice and bulk avalanche photodiodes (APD´s). The thickness of the avalanche and absorption regions, as well as the electric fields in these layers are optimized, as is the hetero-interface field. We find that high-performance APD´s operating up to 20 GHz are feasible.
Keywords :
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; optimisation; semiconductor superlattices; 20 GHz; GHz avalanche photodiode optimisation; InGaAs; InGaAs absorption layer; absorption regions; bulk avalanche photodiodes; electric fields; hetero-interface field; high-frequency response; high-performance APD; superlattice avalanche photodiodes; Absorption; Avalanche photodiodes; Bandwidth; Buffer layers; Detectors; Frequency response; Indium gallium arsenide; Photonic band gap; Superlattices; Tunneling;
Journal_Title :
Photonics Technology Letters, IEEE
