• DocumentCode
    1419670
  • Title

    Ga1-yInyAs/InAsxP1-1 ( y>0.53, x>0) pin photodiodes for long wavelength regions (λ>2 μm) grown by hydride vapour phase epitaxy

  • Author

    Maki, K. ; Ishihara, H. ; Taguchi, Katsuhisa

  • Author_Institution
    Opto-Electron. Res. Labs., NEC Corp., Kawasaki
  • Volume
    24
  • Issue
    7
  • fYear
    1988
  • fDate
    3/31/1988 12:00:00 AM
  • Firstpage
    379
  • Lastpage
    380
  • Abstract
    pin photodiodes with a 2.3 μm absorption edge are presented, using hydride vapour phase epitaxy. A Ga1-yInyAs (y=0.72) absorption layer, lattice-mismatched to the InP substrate, was grown on an InAsxP1-x (x=0-0.33) graded composition buffer layer. Typical dark current was 5 μA (0.03 A/cm2) at -6 V. Effective carrier lifetime of 0.05 μs was estimated from I/V characteristics
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; optical communication equipment; photodiodes; semiconductor epitaxial layers; semiconductor technology; vapour phase epitaxial growth; 2 to 2.3 micron; 5 muA; 50 ns; 6 V; GaInAs-InAsP photodiodes; I/V characteristics; InAsP buffer layer; InP substrates; absorption edge; absorption layer; carrier lifetime; dark current; graded composition buffer layer; hydride vapour phase epitaxy; lattice-mismatched; long wavelength photodiodes; pin photodiodes;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    5681
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1419670