DocumentCode :
1419744
Title :
The Hobetron-a high power vacuum electronic switch
Author :
True, Richard B. ; Hansen, Robert J. ; Good, Gwen R.
Author_Institution :
Electron. Devices Div., Litton Syst. Inc., San Carlso, CA, USA
Volume :
48
Issue :
1
fYear :
2001
fDate :
1/1/2001 12:00:00 AM
Firstpage :
122
Lastpage :
128
Abstract :
This paper describes a new high-power, hollow electron beam, current-regulating switch tube that we call the Hobetron. Experimental data on the Litton L-6026 Hobetron, an engineering prototype designed to stand off 125 kV dc and switch 200 amps, has demonstrated that Hobetron performance is in excellent agreement with computer predictions over the range of test. Further, the data confirmed that L-6026 switch power loss is less than 20% that of standard magnetron injection gun (MIG) switch tubes (for similar currents through each). Various potential Hobetron applications are presented throughout the paper. It is possible to include an additional electrode in the basic Hobetron configuration for even higher voltage standoff and switch current capability, and the paper presents an arrangement capable of standing off 500 kV dc and switching 500 amps. Simulations of a superpower “Hobetron-Plus” are presented, and the potential of this device as an efficient, 50 MW peak, relatively compact, VHF power amplifier for advanced heavy-particle (e.g., muon) colliders, is evaluated
Keywords :
VHF amplifiers; klystrons; particle accelerator accessories; power amplifiers; vacuum switches; vacuum tubes; 125 kV; 200 A; 50 MW; 500 A; 500 kV; Hobetron; L-6026 switch power loss; Litton L-6026 Hobetron; VHF power amplifier; computer predictions; heavy-particle colliders; high power vacuum electronic switch; high-power hollow electron beam current-regulating switch tube; muon colliders; superpower Hobetron-Plus simulation; switch current capability; voltage standoff; Data engineering; Design engineering; Electron beams; Electron tubes; Magnetic switching; Power engineering and energy; Power engineering computing; Prototypes; Switches; Testing;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.892178
Filename :
892178
Link To Document :
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