Analytical electrostatic model of silicon conical field emitters. I

Author

Dvorson, Leonard ; Ding, Meng ; Akinwande, Akintunde Ibitayo

Author_Institution

Microsystems Technol. Lab., MIT, Cambridge, MA, USA

Volume

48

Issue

1

fYear

2001

fDate

1/1/2001 12:00:00 AM

Firstpage

134

Lastpage

143

Abstract

We present an analytical electrostatic model for a conical field emitter surrounded by a circular gate. The model is based on a radially symmetric orthonormal expansion of the potential throughout all space in the basis of Legendre functions of nonintegral degrees. The “bowling pin” model (BPM) makes it possible to calculate the total emission current and electron trajectories. The calculated values of the emitted current are in good agreement with the data. The value for the tip radius of curvature (ROC) obtained as the adjustable parameter in the model is in good agreement with that obtained from independent numerical modeling of the same devices

Keywords

electron field emission; electrostatics; elemental semiconductors; field emission displays; silicon; vacuum microelectronics; FEA; Si; Si conical field emitters; analytical electrostatic model; bowling pin model; circular gate; electron trajectories; nonintegral degree Legendre functions; numerical modeling; radially symmetric orthonormal expansion; tip radius of curvature; total emission current; Analytical models; Electrodes; Electron emission; Electrostatic analysis; Equations; Flat panel displays; Numerical models; Predictive models; Silicon; Solid modeling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.892180

Filename

892180