Title :
Analytical electrostatic model of silicon conical field emitters. II. Extension to devices with focusing electrode
Author :
Dvorson, Leonard ; Ding, Meng ; Akinwande, Akintunde Ibitayo
Author_Institution :
Microsystems Technol. Lab., MIT, Cambridge, MA, USA
fDate :
1/1/2001 12:00:00 AM
Abstract :
For pt. I see ibid., vol.48, no.1, p.134-43 (Jan. 2001). We extended the “bowling pin model” (BPM) presented in pt. I, to the case of double-gated conical field emitters. The model was used for trajectory calculations for both the single-gated and double-gated devices. Analysis also produced the governing relationship for the optimal operating voltages on the gate and focus electrodes of a double-gated emitter
Keywords :
electron field emission; electrostatics; elemental semiconductors; field emission displays; silicon; vacuum microelectronics; FEDs; Si; Si conical field emitters; analytical electrostatic model; bowling pin model; double-gated conical field emitters; focusing electrode; optimal operating voltages; single-gated devices; trajectory calculations; Analytical models; Anodes; Brightness; Electrodes; Electron beams; Electrostatic analysis; Flat panel displays; Phosphors; Silicon; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
