Strained InGaAs-GaAs single-quantum-well lasers coupled to n-type δ-doping-improved static and dynamic performance

Author

Buchinsky, Oded ; Blumin, Marina ; Orenstein, Meir ; Eisenstein, Gadi ; Fekete, Dan

Author_Institution

Dept. of Phys. & Solid State Inst., Technion-Israel Inst. of Technol., Haifa, Israel

Volume

34

Issue

9

fYear

1998

fDate

9/1/1998 12:00:00 AM

Firstpage

1690

Lastpage

1697

Abstract

A new concept for improving the performance of quantum-well (QW) lasers is reported. The enhancement, both in static and dynamic characteristics, was accomplished by the use of Te n-type δ-doping, coupled to a single strained InGaAs-GaAs QW. The internal parameters were investigated, and their enhancement origin is revealed. It is shown to be mainly a consequence of the higher carrier population in the QW and due to the strong coupling between the QW and the δ-doping well

Keywords

III-V semiconductors; gallium arsenide; indium compounds; quantum well lasers; semiconductor doping; InGaAs-GaAs; QW lasers; Te; Te n-type δ-doping; carrier population; dynamic performance; internal parameters; n-type δ-doping; single strained InGaAs-GaAs QW; static performance; strained InGaAs-GaAs single-quantum-well lasers; strong coupling; Bandwidth; Chemical lasers; Epitaxial layers; Laser theory; Lasers and electrooptics; Optical coupling; Quantum well lasers; Semiconductor lasers; Tellurium; Waveguide lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.709585

Filename

709585