A proposed single grain-boundary thin-film transistor

Author

Oh, Chang-Ho ; Matsumura, Masakiyo

Author_Institution

Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan

Volume

22

Issue

1

fYear

2001

Firstpage

20

Lastpage

22

Abstract

A new Si thin-film transistor (TFT) has been proposed where only one grain-boundary exists at the center of channel, and the source and drain are within single grains with good crystallinity. The device fabricated by an excimer-laser crystallization method at the maximum temperature of 500/spl deg/C, had the on-off current ratio /spl cong/10/sup 6/, the field-effect mobility /spl cong/330 cm/sup 2//Vs and the subthreshold swing /spl cong/1.1 V/dec, respectively, For the device processed at 800/spl deg/C, they are >10/sup 6/, >450 cm/sup 2//Vs and /spl cong/0.51 V/dec, respectively.

Keywords

electron mobility; elemental semiconductors; grain boundaries; laser beam annealing; silicon; thin film transistors; 500 C; Si; excimer-laser crystallization method; field-effect mobility; maximum temperature; on-off current ratio; single grain-boundary thin-film transistor; subthreshold swing; Annealing; Crystallization; Gradient methods; Grain boundaries; Proposals; Semiconductor films; Silicon compounds; Temperature; Thin film transistors; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.892431

Filename

892431