Title :
Hot hole gate current in surface channel PMOSFETs
Author :
Driussi, F. ; Esseni, D. ; Selmi, L. ; Piazza, F.
Author_Institution :
DIEGM, Udine, Italy
Abstract :
This paper reports the observation of a new hot hole component of the gate current of p/sup +/-poly gate pMOS transistors. The phenomenon is characterized as a function of drain, gate, and substrate bias on devices featuring different oxide thickness and drain engineering options. The new hole gate current component is ascribed to injection into the oxide of substrate tertiary holes, generated by an impact ionization feedback mechanism similar to that responsible of CHannel Initiated Secondary ELectron injection (CHISEL) in nMOSFETs.
Keywords :
MOSFET; hot carriers; impact ionisation; CHannel Initiated Secondary ELectron injection; drain bias; drain engineering options; gate bias; hot hole gate current; impact ionization feedback mechanism; oxide thickness; substrate bias; surface channel PMOSFETs; Channel hot electron injection; Charge carrier processes; Feedback; Helium; Hot carriers; Impact ionization; MOS devices; MOSFET circuits; Physics; Substrate hot electron injection;
Journal_Title :
Electron Device Letters, IEEE
