DocumentCode
1420164
Title
Simulation of SOI devices and circuits using BSIM3SOI
Author
Sinitsky, D. ; Tang, S. ; Jangity, A. ; Assaderaghi, F. ; Shahidi, G. ; Chenming Hu
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Volume
19
Issue
9
fYear
1998
Firstpage
323
Lastpage
325
Abstract
A versatile SOI model derived from the BSIM3v3 bulk MOSFET model is capable of simulating partially and fully depleted devices with options for self-heating and floating body effects. The model can automatically switch between fully and partially depleted regimes. After refining body current models we for the first time present successful dc and transient device and circuit simulation of an SOI MOSFET technology with L/sub eff/ below 0.2 μm.
Keywords
MOS integrated circuits; MOSFET; circuit analysis computing; digital simulation; semiconductor device models; silicon-on-insulator; transient analysis; 0.2 micron; BSIM3SOI; SOI devices; SOI model; body current models; bulk MOSFET model; dc simulation; floating body effects; fully depleted devices; partially depleted devices; self-heating effects; transient simulation; Circuit simulation; Data mining; Doping profiles; Impact ionization; MOSFET circuits; Pulse measurements; Semiconductor diodes; Semiconductor films; Semiconductor process modeling; Switches;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.709628
Filename
709628
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