Low-temperature polysilicon thin-film transistors fabricated from laser-processed sputtered-silicon films

Author

Giust, Gary K. ; Sigmon, Thomas W. ; Carey, Paul G. ; Weiss, B. ; Davis, Gary A.

Author_Institution

Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA

Volume

19

Issue

9

fYear

1998

Firstpage

343

Lastpage

344

Abstract

In an effort to develop a simple low-temperature high-performance polysilicon thin-film transistor (TFT) technology, we report a fabrication process featuring laser-crystallized sputtered-silicon films. This top Al-gate coplanar TFT process subjects the substrate to a maximum temperature of 300/spl deg/C, and produces devices with mobilities up to 450 cm/sup 2//Vs, on/off current ratios greater than 10/sup 7/, without using a post-hydrogenation step. We believe these results represent the highest performance TFT´s to date fabricated from sputtered silicon films.

Keywords

MOS integrated circuits; MOSFET; carrier mobility; crystallisation; elemental semiconductors; integrated circuit technology; laser materials processing; semiconductor thin films; silicon; sputtered coatings; thin film transistors; 300 C; Al-SiO/sub 2/-Si; fabrication process; laser-crystallized semiconductor films; laser-processed sputtered films; low-temperature TFT technology; polysilicon thin-film transistors; sputtered Si films; top Al-gate coplanar TFT process; Crystallization; Laboratories; Optical device fabrication; Optical pulses; Pulsed laser deposition; Semiconductor films; Silicon; Substrates; Temperature; Thin film transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.709637

Filename

709637