AC floating-body effects in submicron fully depleted (FD) SOI nMOSFETs and the impact on analog applications

Author

Tseng, Ying-Che ; Huang, W. Margaret ; Diaz, Dennis C. ; Ford, Jenny M. ; Woo, Jason C S

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

Volume

19

Issue

9

fYear

1998

Firstpage

351

Lastpage

353

Abstract

We report the impact of submicron fully depleted (FD) SOI MOSFET technology on device AC characteristics and the resultant effects on analog circuit issues. The weak DC kink and high frequency AC kink dispersion in FD SOI still degrade circuit performance in terms of distortion and low-frequency noise requirements. These issues raise concerns about FD devices for mixed-mode applications. Therefore, further device optimization such as source/drain engineering is still necessary to solve the aforementioned issues for FD SOI. On the other hand, partially depleted SOI MOSFET with body contact structures provide an alternative technology for RF/baseband analog applications.

Keywords

CMOS analogue integrated circuits; MOSFET; electric distortion; integrated circuit noise; semiconductor device noise; silicon-on-insulator; AC floating-body effects; CMOSFETs; RF/baseband analog applications; Si; analog circuit applications; body contact structures; device AC characteristics; device optimization; distortion; low-frequency noise requirements; mixed-mode applications; n-channel MOSFET; partially depleted SOI MOSFET; source/drain engineering; submicron fully depleted SOI nMOSFET; Analog circuits; CMOS technology; Degradation; Harmonic distortion; History; Hysteresis; Low-frequency noise; MOSFET circuits; Silicon on insulator technology; Switching circuits;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.709641

Filename

709641