Title :
A fully integrated low-power CMOS particle detector front-end for space applications
Author :
Vandenbussche, J. ; Leyn, F. ; Van der Plas, G. ; Gielen, G. ; Sansen, W.
Author_Institution :
ESAT, Katholieke Univ., Leuven, Heverlee, Belgium
fDate :
8/1/1998 12:00:00 AM
Abstract :
A fully integrated low-power complementary metal-oxide-semiconductor (CMOS) particle detector front-end (PDFE), optimized for space applications, is presented. The front-end comprises a charge sensitive amplifier and a four-stage semi-Gaussian pulse-shaping amplifier. The chip was custom synthesized with an analog synthesis environment. With a power consumption of only 10 mW and a chip area less than 1 mm2, the chip is very well suited for the stringent demands in space applications. Measurements show a peaking time of 1.2 μs and a total equivalent noise charge of less than 1000 erms-. Although a standard 0.7-μm CMOS was used, little performance degradation was observed after exposure to a total dose irradiation of 50 kRad. All tested chips fully recovered within specifications, after 24 h of annealing at room temperature
Keywords :
CMOS analogue integrated circuits; analogue processing circuits; integrated circuit design; integrated circuit noise; integrated circuit testing; nuclear electronics; pulse shaping circuits; radiation effects; space vehicle electronics; 0.7 mum; 1.2 mus; 10 mW; 293 K; 50 krad; annealing; charge sensitive amplifier; chip area; dose; fully integrated low-power CMOS particle detector front-end; irradiation; particle detector front-end; peaking time; performance degradation; power consumption; room temperature; semi-Gaussian pulse-shaping amplifier; total equivalent noise charge; Charge measurement; Current measurement; Degradation; Energy consumption; Noise measurement; Pulse amplifiers; Radiation detectors; Semiconductor device measurement; Time measurement; Working environment noise;
Journal_Title :
Nuclear Science, IEEE Transactions on
