DocumentCode
1420455
Title
Electrical properties of devices fabricated on laser-etched silicon
Author
Treyz, G.V. ; Osgood, Richard M., Jr.
Author_Institution
Microelectron. Sci. Lab., Columbia Univ., New York, NY, USA
Volume
9
Issue
5
fYear
1988
fDate
5/1/1988 12:00:00 AM
Firstpage
262
Lastpage
264
Abstract
Focused laser etching has been investigated for use in limited area processing (LAP) of silicon wafers. The electrical properties of the etched material have been characterized for the first time by fabricating several different test structures, including isolation trenches, Schottky barrier diodes, and MOS trench capacitors. The etched material is suitable for many applications.<>
Keywords
Schottky-barrier diodes; elemental semiconductors; etching; laser beam applications; metal-insulator-semiconductor structures; semiconductor technology; silicon; MOS trench capacitors; Schottky barrier diodes; Si wafers; electrical properties; focused laser etching; isolation trenches; limited area processing; semiconductor; test structures; Etching; Gas lasers; MOS capacitors; Optical materials; Power lasers; Schottky barriers; Schottky diodes; Silicon; Surface emitting lasers; Testing;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.710
Filename
710
Link To Document