Title :
Light scattering determinations of band offsets in semiconductor heterostructures
Author :
Menéndez, J. ; Pinczuk, A.
Author_Institution :
Dept. of Phys., Arizona State Univ., Tempe, AZ, USA
Abstract :
Inelastic light scattering is used to determine the band offsets in semiconductor heterojunctions. The conduction-band discontinuity is obtained from energy level spacings measured in electronic light scattering spectra of photoexcited quantum-well heterostructures. The method is applied to GaAs-AlGaAs, GaSb-AlGaSb and InGaAs-GaAs heterojunctions. The light scattering determinations of band offsets are examined, and these results are compared with those obtained with more conventional methods. The impact of the light scattering results on chemical trends is considered, along with the influence of strain in the band-lineup problem.<>
Keywords :
III-V semiconductors; aluminium compounds; conduction bands; gallium arsenide; gallium compounds; indium compounds; light scattering; semiconductor quantum wells; visible spectra of inorganic solids; GaAs-AlGaAs; GaSb-AlGaSb; InGaAs-GaAs; band offsets; band-lineup problem; chemical trends; conduction-band discontinuity; electronic light scattering spectra; energy level spacings; inelastic light scattering; photoexcited quantum-well heterostructures; semiconductor heterostructures; strain influence; Capacitive sensors; Chemicals; Effective mass; Energy measurement; Energy states; Heterojunctions; Lattices; Light scattering; Quantum wells;
Journal_Title :
Quantum Electronics, IEEE Journal of
