DocumentCode :
1420475
Title :
Statistical Modeling of Secondary Path During Erase Operation in Phase Change Memories
Author :
Zambelli, Cristian ; Chimenton, Andrea ; Olivo, Piero
Author_Institution :
Dipt. di Ing., Univ. di Ferrara, Ferrara, Italy
Volume :
59
Issue :
3
fYear :
2012
fDate :
3/1/2012 12:00:00 AM
Firstpage :
813
Lastpage :
818
Abstract :
In this paper, we analyze the read current shifts that have been observed after the erase operations in phase change memory arrays. Experimental data analyses allow detecting statistical features of the current shifts in terms of their occurrence and magnitude, which are consistent with the physical interpretation attributed to the presence or absence of secondary percolation path in parallel to the main one created during the crystallization process. Based on the statistical characterization, we develop a model for the read current that reproduces the measured read current distributions after erase, during cycling, and for different erase pulse durations.
Keywords :
phase change memories; statistical analysis; crystallization process; erase operation; erase pulse durations; phase change memories; read current distributions; read current shift; secondary-percolation path statistical modeling; Computer architecture; Microprocessors; Phase change materials; Phase change memory; Probability; Reliability; Electrical characterization; modeling; nonvolatile memory; phase change memory; reliability; secondary path; statistics;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2011.2179047
Filename :
6129498
Link To Document :
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