Calibration of a two-dimensional numerical model for the optimization of LOGOS-type isolations by response surface methodology

The models used for process simulation have to be carefully calibrated in order to insure a correct prediction of the topography and doping/stress profiles of microelectronic devices. With the current miniaturization of these devices, the requirements on the accuracy of the simulated results become greater, which puts more constraints on the calibration methodology. This is particularly the case for the silicon oxidation model, which is involved in numerous fundamental steps of an industrial process. In this paper, using response surface methodology, a viscoelastic oxidation model has been calibrated on a wide range of process conditions, which has allowed the optimization of LOCOS-type isolation structures for a 0.35-μm CMOS technology