• DocumentCode
    1420919
  • Title

    Lead salt quantum effect structures

  • Author

    Partin, Dale L.

  • Author_Institution
    General Motors Res. Labs., Warren, MI, USA
  • Volume
    24
  • Issue
    8
  • fYear
    1988
  • fDate
    8/1/1988 12:00:00 AM
  • Firstpage
    1716
  • Lastpage
    1726
  • Abstract
    Lead salt (IV-VI) compounds have been grown epitaxially by a variety of growth techniques, such as molecular-beam epitaxy and hot-wall epitaxy. Recently, compositional superlattices and quantum-well heterostructures have been grown that exhibit strong quantum optical effects. These structures have been used to fabricate midinfrared diode lasers with greatly improved operating temperatures. Thus, it appears that these devices will continue to maintain a significant advantage over II-VI and III-V compound diode lasers. Doping superlattices have been made which possess enhanced minority carrier properties. Ferromagnetic ordering in PbSnTe-MnTe alloys suggests potential areas for future work in magnetic field sensitivity devices. Lead salt quantum-effect structures are included
  • Keywords
    IV-VI semiconductors; ferromagnetic properties of substances; lead compounds; magnetic epitaxial layers; manganese compounds; minority carriers; reviews; semiconductor epitaxial layers; semiconductor junction lasers; semiconductor quantum wells; semiconductor superlattices; tin compounds; Pb salt quantum effect structures; PbSnTe-MnTe alloys; compositional superlattices; doping superlattices; epitaxial growth; ferromagnetic ordering; hot-wall epitaxy; mid IR; midinfrared diode lasers; minority carrier properties; molecular-beam epitaxy; operating temperatures; quantum-well heterostructures; strong quantum optical effects; Diode lasers; Doping; Epitaxial growth; III-V semiconductor materials; Lead compounds; Molecular beam epitaxial growth; Optical sensors; Optical superlattices; Quantum well lasers; Temperature sensors;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/3.7102
  • Filename
    7102