• DocumentCode
    1421297
  • Title

    Photodiodes With Monolithically Integrated Wilkinson Power Combiner

  • Author

    Fu, Yang ; Pan, Huapu ; Campbell, Joe C.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA, USA
  • Volume
    46
  • Issue
    4
  • fYear
    2010
  • fDate
    4/1/2010 12:00:00 AM
  • Firstpage
    541
  • Lastpage
    545
  • Abstract
    We report the output power and linearity characteristics of two InP/InGaAs partially-depleted-absorber photodiodes monolithically integrated with a Wilkinson power combiner. Compared to a single photodiode an increase of 3 dB in output power is achieved and improved intermodulation distortion, as denoted by the figure of merit, OIP3, is observed in the frequency range up to 20 GHz. We also show that discrete photodiodes with single-stub tuning have improved OIP3 over a frequency range of a few GHz at the expense of reduced output power compared to those without tuning circuits. A model which provides good fits to the frequency dependence of the enhanced OIP3 is developed.
  • Keywords
    gallium arsenide; indium compounds; intermodulation distortion; photodiodes; power combiners; InP-InGaAs; OIP3; Wilkinson power combiner; figure of merit; intermodulation distortion; partially-depleted-absorber photodiodes; tuning circuits; Circuit optimization; Circuit testing; Coplanar waveguides; Indium gallium arsenide; Indium phosphide; Linearity; Photodiodes; Power combiners; Power generation; Radio frequency; Impedance matching; monolithic integrated circuits; nonlinearities; photodiodes; power combiners;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.2009.2035058
  • Filename
    5416602