DocumentCode :
1421297
Title :
Photodiodes With Monolithically Integrated Wilkinson Power Combiner
Author :
Fu, Yang ; Pan, Huapu ; Campbell, Joe C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA, USA
Volume :
46
Issue :
4
fYear :
2010
fDate :
4/1/2010 12:00:00 AM
Firstpage :
541
Lastpage :
545
Abstract :
We report the output power and linearity characteristics of two InP/InGaAs partially-depleted-absorber photodiodes monolithically integrated with a Wilkinson power combiner. Compared to a single photodiode an increase of 3 dB in output power is achieved and improved intermodulation distortion, as denoted by the figure of merit, OIP3, is observed in the frequency range up to 20 GHz. We also show that discrete photodiodes with single-stub tuning have improved OIP3 over a frequency range of a few GHz at the expense of reduced output power compared to those without tuning circuits. A model which provides good fits to the frequency dependence of the enhanced OIP3 is developed.
Keywords :
gallium arsenide; indium compounds; intermodulation distortion; photodiodes; power combiners; InP-InGaAs; OIP3; Wilkinson power combiner; figure of merit; intermodulation distortion; partially-depleted-absorber photodiodes; tuning circuits; Circuit optimization; Circuit testing; Coplanar waveguides; Indium gallium arsenide; Indium phosphide; Linearity; Photodiodes; Power combiners; Power generation; Radio frequency; Impedance matching; monolithic integrated circuits; nonlinearities; photodiodes; power combiners;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.2009.2035058
Filename :
5416602
Link To Document :
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