DocumentCode :
1421301
Title :
Buck-Converter Design for Power in Plus 275??C Environments
Author :
Madhuravasal, Vijayaraghavan ; Venkataraman, Srinivasan ; Hutchens, Chriswell
Author_Institution :
Oklahoma State Univ., Stillwater, OK, USA
Volume :
48
Issue :
1
fYear :
2012
Firstpage :
304
Lastpage :
312
Abstract :
The design and development of a dc to dc buck converter capable of operating up to 275°C is presented. The control circuitry design is based on the vee-square (V2) control mechanism. The system converts a raw dc input voltage in the range of 15 V to 25 V to a stepped-down and filtered output voltage in the range of 1.5 V to 18 V. A custom designed user programmable control circuitry is implemented on the low leakage, radiation tolerant silicon-on-insulator technology. Silicon carbide junction field effect transistors (JFETs) are used as power switches to sustain extreme operating temperature. The system is prototyped on the aluminum nitride substrate to meet packaging requirements. Design considerations for the planar transformer coupled gate drive are specifically addressed. The system performance is studied based on a 20 V to 3.3 V prototype converter. The demonstrated system has potential market in extreme environment applications like deep space explorations, down-hole geothermal and deep gas reservoir management, etc.
Keywords :
DC-DC power convertors; field effect transistors; high-temperature electronics; network synthesis; silicon-on-insulator; substrates; DC-to-DC buck converter; JFET; aluminum nitride substrate; buck-converter design; control circuitry design; coupled gate drive; dc input voltage conversion; deep gas reservoir management; down-hole geothermal management; filtered output voltage; low leakage; planar transformer; power switches; prototype converter; radiation tolerant silicon-on-insulator technology; silicon carbide junction field effect transistors; stepped-down voltage; temperature 275 degC; user programmable control circuitry; vee-square control mechanism; voltage 1.5 V; voltage 15 V; voltage 18 V; voltage 20 V; voltage 25 V; voltage 3.3 V; Capacitors; Logic gates; Resistance; Silicon carbide; Switches; Temperature; Voltage control;
fLanguage :
English
Journal_Title :
Aerospace and Electronic Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9251
Type :
jour
DOI :
10.1109/TAES.2012.6129637
Filename :
6129637
Link To Document :
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