DocumentCode
1421301
Title
Buck-Converter Design for Power in Plus 275??C Environments
Author
Madhuravasal, Vijayaraghavan ; Venkataraman, Srinivasan ; Hutchens, Chriswell
Author_Institution
Oklahoma State Univ., Stillwater, OK, USA
Volume
48
Issue
1
fYear
2012
Firstpage
304
Lastpage
312
Abstract
The design and development of a dc to dc buck converter capable of operating up to 275°C is presented. The control circuitry design is based on the vee-square (V2) control mechanism. The system converts a raw dc input voltage in the range of 15 V to 25 V to a stepped-down and filtered output voltage in the range of 1.5 V to 18 V. A custom designed user programmable control circuitry is implemented on the low leakage, radiation tolerant silicon-on-insulator technology. Silicon carbide junction field effect transistors (JFETs) are used as power switches to sustain extreme operating temperature. The system is prototyped on the aluminum nitride substrate to meet packaging requirements. Design considerations for the planar transformer coupled gate drive are specifically addressed. The system performance is studied based on a 20 V to 3.3 V prototype converter. The demonstrated system has potential market in extreme environment applications like deep space explorations, down-hole geothermal and deep gas reservoir management, etc.
Keywords
DC-DC power convertors; field effect transistors; high-temperature electronics; network synthesis; silicon-on-insulator; substrates; DC-to-DC buck converter; JFET; aluminum nitride substrate; buck-converter design; control circuitry design; coupled gate drive; dc input voltage conversion; deep gas reservoir management; down-hole geothermal management; filtered output voltage; low leakage; planar transformer; power switches; prototype converter; radiation tolerant silicon-on-insulator technology; silicon carbide junction field effect transistors; stepped-down voltage; temperature 275 degC; user programmable control circuitry; vee-square control mechanism; voltage 1.5 V; voltage 15 V; voltage 18 V; voltage 20 V; voltage 25 V; voltage 3.3 V; Capacitors; Logic gates; Resistance; Silicon carbide; Switches; Temperature; Voltage control;
fLanguage
English
Journal_Title
Aerospace and Electronic Systems, IEEE Transactions on
Publisher
ieee
ISSN
0018-9251
Type
jour
DOI
10.1109/TAES.2012.6129637
Filename
6129637
Link To Document