• DocumentCode
    1421301
  • Title

    Buck-Converter Design for Power in Plus 275??C Environments

  • Author

    Madhuravasal, Vijayaraghavan ; Venkataraman, Srinivasan ; Hutchens, Chriswell

  • Author_Institution
    Oklahoma State Univ., Stillwater, OK, USA
  • Volume
    48
  • Issue
    1
  • fYear
    2012
  • Firstpage
    304
  • Lastpage
    312
  • Abstract
    The design and development of a dc to dc buck converter capable of operating up to 275°C is presented. The control circuitry design is based on the vee-square (V2) control mechanism. The system converts a raw dc input voltage in the range of 15 V to 25 V to a stepped-down and filtered output voltage in the range of 1.5 V to 18 V. A custom designed user programmable control circuitry is implemented on the low leakage, radiation tolerant silicon-on-insulator technology. Silicon carbide junction field effect transistors (JFETs) are used as power switches to sustain extreme operating temperature. The system is prototyped on the aluminum nitride substrate to meet packaging requirements. Design considerations for the planar transformer coupled gate drive are specifically addressed. The system performance is studied based on a 20 V to 3.3 V prototype converter. The demonstrated system has potential market in extreme environment applications like deep space explorations, down-hole geothermal and deep gas reservoir management, etc.
  • Keywords
    DC-DC power convertors; field effect transistors; high-temperature electronics; network synthesis; silicon-on-insulator; substrates; DC-to-DC buck converter; JFET; aluminum nitride substrate; buck-converter design; control circuitry design; coupled gate drive; dc input voltage conversion; deep gas reservoir management; down-hole geothermal management; filtered output voltage; low leakage; planar transformer; power switches; prototype converter; radiation tolerant silicon-on-insulator technology; silicon carbide junction field effect transistors; stepped-down voltage; temperature 275 degC; user programmable control circuitry; vee-square control mechanism; voltage 1.5 V; voltage 15 V; voltage 18 V; voltage 20 V; voltage 25 V; voltage 3.3 V; Capacitors; Logic gates; Resistance; Silicon carbide; Switches; Temperature; Voltage control;
  • fLanguage
    English
  • Journal_Title
    Aerospace and Electronic Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9251
  • Type

    jour

  • DOI
    10.1109/TAES.2012.6129637
  • Filename
    6129637