DocumentCode :
1421479
Title :
Analysis and numerical simulation of eigenmode characteristics for semiconductor lasers with an equilateral triangle micro-resonator
Author :
Huang, Yong-Zhen ; Guo, Wei-Hua ; Wang, Qi-Ming
Author_Institution :
Inst. of Semicond., Acad. Sinica, Beijing, China
Volume :
37
Issue :
1
fYear :
2001
fDate :
1/1/2001 12:00:00 AM
Firstpage :
100
Lastpage :
107
Abstract :
The eigenmodes confined in the equilateral triangle resonator (ETR) are analyzed by deriving the eigenvalues and the mode field distributions and by the finite difference time domain (FDTD) technique. The analytical results show that the one-period-length for the mode light rays inside the ETR is the perimeter of the ETR, and the number of transverse modes is limited by the condition of total internal reflection. In addition, the sum of the longitudinal mode index and the transverse mode index should be an even number, which limits the number of confined modes again. Based on the FDTD technique and the Pade approximation, we calculate the mode resonant frequencies and the quality factors from the local maximum and the width of the spectral distribution of the intensity. The numerical results of mode frequencies agree very well with the analytical results, and the quality factor of the fundamental mode is usually higher than that of the higher order transverse modes. The results show that the ETR is suitable to realize single-mode operation as semiconductor microcavity lasers
Keywords :
Q-factor; approximation theory; eigenvalues and eigenfunctions; finite difference time-domain analysis; laser modes; laser theory; microcavity lasers; semiconductor device models; semiconductor lasers; FDTD technique; Pade approximation; confined modes; eigenmode characteristics; equilateral triangle micro-resonator; finite difference time domain technique; fundamental mode; higher order transverse modes; longitudinal mode index; mode field distributions; mode light rays; mode resonant frequencies; numerical simulation; quality factors; semiconductor lasers; semiconductor microcavity lasers; single-mode operation; spectral distribution; total internal reflection; transverse mode index; transverse modes; Eigenvalues and eigenfunctions; Finite difference methods; Laser modes; Microcavities; Numerical simulation; Optical reflection; Q factor; Resonant frequency; Semiconductor lasers; Time domain analysis;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.892731
Filename :
892731
Link To Document :
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