Title :
Continuous-wave operation of type-I quantum well DFB laser diodes emitting in 3.4 μm wavelength range around room temperature
Author :
Naehle, Lars ; Belahsene, S. ; von Edlinger, Michael ; Fischer, M. ; Boissier, G. ; Grech, P. ; Narcy, G. ; Vicet, A. ; Rouillard, Y. ; Koeth, Johannes ; Worschech, L.
Author_Institution :
Nanoplus GmbH, Gerbrunn, Germany
Abstract :
Distributed feedback (DFB) laser diodes based on the concept of lateral metal gratings fabricated on type-I quantum well GaInAsSb/AlGaInAsSb material are presented. Monomode emission in the 3.4 μm wavelength range was achieved for the first time for a GaSb based DFB laser diode. Excellent sidemode suppression ratios beyond 30 dB are demonstrated in combination with a modehop-free tuning range around 8.5 nm. Using a specially developed polymer-free DFB processing route allowing improved heat dissipation, laser operation in continuous-wave mode was observed at temperatures up to around 20°C.
Keywords :
III-V semiconductors; aluminium compounds; cooling; diffraction gratings; distributed feedback lasers; gallium compounds; indium compounds; laser tuning; quantum well lasers; GaInAsSb-AlGaInAsSb; continuous wave operation; distributed feedback laser diodes; heat dissipation; laser operation; lateral metal gratings; modehop free tuning; monomode emission; sidemode suppression ratios; temperature 293 K to 298 K; type-I quantum well DFB laser diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2010.2733
