Recent developments of high power converters for industry and traction applications

Author

Bernet, Steffen

Author_Institution

ABB Corporate Res., Heidelberg, Germany

Volume

15

Issue

6

fYear

2000

fDate

11/1/2000 12:00:00 AM

Firstpage

1102

Lastpage

1117

Abstract

The introduction of new high power devices like integrated gate commutated thyristors (IGCTs) and high voltage insulated gate bipolar transistors (IGBTs) accelerates the broad use of pulse width modulation (PWM) voltage source converters in industrial and traction applications. This paper summarizes the state-of-the-art of power semiconductors. The characteristics of IGCTs and high voltage IGBTs are described in detail. Both the design and loss simulations of a two level 1.14 MVA voltage source inverter and a 6 MVA three-level neutral point clamped voltage source converter with active front end enable a detailed comparison of both power semiconductors for high power PWM converters. The design and the characteristics of a commercially available IGCT neutral point clamped PWM voltage source converter for medium voltage drives are discussed. Recent developments and trends of traction converters at DC mains and AC mains are summarized

Keywords

MOS-controlled thyristors; PWM power convertors; insulated gate bipolar transistors; traction; 1.14 MVA; 6 MVA; AC mains; DC mains; IGBT; IGCT; PWM voltage source converters; active front end; high power PWM converters; high power converters; high voltage insulated gate bipolar transistors; industry applications; integrated gate commutated thyristors; loss simulations; medium voltage drives; power semiconductors; pulse width modulation voltage source converters; three-level neutral point clamped voltage source converter; traction applications; traction converters; two level voltage source inverter; Insulated gate bipolar transistors; MOSFETs; Power conversion; Pulse width modulation; Pulse width modulation converters; Pulse width modulation inverters; Schottky diodes; Silicon; Thyristors; Voltage;

fLanguage

English

Journal_Title

Power Electronics, IEEE Transactions on

Publisher

ieee

ISSN

0885-8993

Type

jour

DOI

10.1109/63.892825

Filename

892825