Title :
Recent developments of high power converters for industry and traction applications
Author_Institution :
ABB Corporate Res., Heidelberg, Germany
fDate :
11/1/2000 12:00:00 AM
Abstract :
The introduction of new high power devices like integrated gate commutated thyristors (IGCTs) and high voltage insulated gate bipolar transistors (IGBTs) accelerates the broad use of pulse width modulation (PWM) voltage source converters in industrial and traction applications. This paper summarizes the state-of-the-art of power semiconductors. The characteristics of IGCTs and high voltage IGBTs are described in detail. Both the design and loss simulations of a two level 1.14 MVA voltage source inverter and a 6 MVA three-level neutral point clamped voltage source converter with active front end enable a detailed comparison of both power semiconductors for high power PWM converters. The design and the characteristics of a commercially available IGCT neutral point clamped PWM voltage source converter for medium voltage drives are discussed. Recent developments and trends of traction converters at DC mains and AC mains are summarized
Keywords :
MOS-controlled thyristors; PWM power convertors; insulated gate bipolar transistors; traction; 1.14 MVA; 6 MVA; AC mains; DC mains; IGBT; IGCT; PWM voltage source converters; active front end; high power PWM converters; high power converters; high voltage insulated gate bipolar transistors; industry applications; integrated gate commutated thyristors; loss simulations; medium voltage drives; power semiconductors; pulse width modulation voltage source converters; three-level neutral point clamped voltage source converter; traction applications; traction converters; two level voltage source inverter; Insulated gate bipolar transistors; MOSFETs; Power conversion; Pulse width modulation; Pulse width modulation converters; Pulse width modulation inverters; Schottky diodes; Silicon; Thyristors; Voltage;
Journal_Title :
Power Electronics, IEEE Transactions on
