Title :
A review of IGBT models
Author :
Sheng, Kuang ; Williams, Barry W. ; Finney, Stephen J.
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
fDate :
11/1/2000 12:00:00 AM
Abstract :
In this paper, insulated gate bipolar transistor (IGBT) models published in the literature are reviewed, analyzed, compared and classified into different categories according to mathematical type, objectives, complexity, accuracy and speed. Features of the different models are listed. Different modeling criteria are discussed according to various circuit conditions, structures, thermal considerations and accuracies. Some problems and trends in IGBT modeling are discussed
Keywords :
insulated gate bipolar transistors; reviews; semiconductor device models; IGBT models; circuit conditions; insulated gate bipolar transistor models; mathematical type; modeling criteria; structures; thermal considerations; Capacitance; Circuit simulation; FETs; Frequency; Insulated gate bipolar transistors; MOSFET circuits; Mathematical model; Medical simulation; Thyristors; Voltage;
Journal_Title :
Power Electronics, IEEE Transactions on
