DocumentCode
1421718
Title
A review of IGBT models
Author
Sheng, Kuang ; Williams, Barry W. ; Finney, Stephen J.
Author_Institution
Dept. of Eng., Cambridge Univ., UK
Volume
15
Issue
6
fYear
2000
fDate
11/1/2000 12:00:00 AM
Firstpage
1250
Lastpage
1266
Abstract
In this paper, insulated gate bipolar transistor (IGBT) models published in the literature are reviewed, analyzed, compared and classified into different categories according to mathematical type, objectives, complexity, accuracy and speed. Features of the different models are listed. Different modeling criteria are discussed according to various circuit conditions, structures, thermal considerations and accuracies. Some problems and trends in IGBT modeling are discussed
Keywords
insulated gate bipolar transistors; reviews; semiconductor device models; IGBT models; circuit conditions; insulated gate bipolar transistor models; mathematical type; modeling criteria; structures; thermal considerations; Capacitance; Circuit simulation; FETs; Frequency; Insulated gate bipolar transistors; MOSFET circuits; Mathematical model; Medical simulation; Thyristors; Voltage;
fLanguage
English
Journal_Title
Power Electronics, IEEE Transactions on
Publisher
ieee
ISSN
0885-8993
Type
jour
DOI
10.1109/63.892840
Filename
892840
Link To Document