Title :
Polarization-dependent refractive-index change induced by superlattice disordering
Author :
Suzuki, Yasuhiro ; Iwamura, Hidetoshi ; Miyazawa, Takeo ; Wakatsuki, Atsushi ; Mikami, Osamu
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
fDate :
11/1/1996 12:00:00 AM
Abstract :
A model of the polarization-dependent refractive-index change that accompanies superlattice disordering is proposed for the first time. Calculated results agree well with experimental results in terms of the amount and direction of the refractive-index changes. In the GaAs-AlAs system, a simple diffusion model that considers the diffusion of group III atoms explains the experimental results. In a InGaAs-InP system, it is assumed that group V atoms mainly induce disordering, and the difference between the diffusion constant in wells and that in barriers is taken into account. The refractive-index changes induced by superlattice disordering are useful for fabricating polarization control devices and integrated optical circuits
Keywords :
III-V semiconductors; aluminium compounds; diffusion; gallium arsenide; indium compounds; integrated optics; light polarisation; refractive index; semiconductor device models; semiconductor superlattices; GaAs-AlAs; GaAs-AlAs system; InGaAs-InP; InGaAs-InP system; diffusion constant; disordering; group III atoms; integrated optical circuits; polarization control devices; polarization-dependent refractive-index change; refractive-index changes; simple diffusion model; superlattice disordering; Communication system control; Impurities; Optical refraction; Optical superlattices; Optical variables control; Optical waveguides; Photonic band gap; Polarization; Rapid thermal annealing; Rapid thermal processing;
Journal_Title :
Quantum Electronics, IEEE Journal of
