DocumentCode :
1421962
Title :
An 
Metal-Semiconductor-Metal VUV Photodetector
Author :
Weng, W.Y. ; Hsueh, T.J. ; Chang, S.J. ; Hung, S.C. ; Huang, G.J. ; Hsueh, H.T. ; Huang, Z.D. ; Chiu, C.J.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume :
11
Issue :
9
fYear :
2011
Firstpage :
1795
Lastpage :
1799
Abstract :
The authors report the conversion of AlGaN epitaxial layer into (AlxGa1-x)2O3 thin film by furnace oxidation at high temperature in oxygen containing ambient. A vacuum-ultraviolet (AlxGa1-x)2O3 photodetector (PD) was also fabricated. It was found that external quantum efficiency of the fabricated PD measured at 220 nm was 30%. It was found that the fabricated PD exhibits extremely large deep-UV-to-visible rejection ratio.
Keywords :
aluminium compounds; gallium compounds; metal-semiconductor-metal structures; nitrogen compounds; photodetectors; semiconductor epitaxial layers; (AlxGa1-x)2O3; AlGaN; epitaxial layer; external quantum efficiency; furnace oxidation; metal-semiconductor-metal VUV photodetector; size 220 nm; thin film; vacuum-ultraviolet photodetector; Aluminum gallium nitride; Current measurement; Furnaces; Gallium; Gallium nitride; Photodetectors; Photonic band gap; ${({rm Al}_{rm x}{rm Ga}_{1-{rm x}})}_{2}{rm O}_{3}$ ; ${rm Ga}_{2}{rm O}_{3}$
fLanguage :
English
Journal_Title :
Sensors Journal, IEEE
Publisher :
ieee
ISSN :
1530-437X
Type :
jour
DOI :
10.1109/JSEN.2011.2104947
Filename :
5682369
Link To Document :
