An ${({\\rm Al}_{\\rm x}{\\rm Ga}_{1-{\\rm x}})}_{2}{\\rm O}_{3}$ Metal-Semiconductor-Metal VUV Photodetector

Author

Weng, W.Y. ; Hsueh, T.J. ; Chang, S.J. ; Hung, S.C. ; Huang, G.J. ; Hsueh, H.T. ; Huang, Z.D. ; Chiu, C.J.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

11

Issue

9

fYear

2011

Firstpage

1795

Lastpage

1799

Abstract

The authors report the conversion of AlGaN epitaxial layer into (Al_xGa_1-x)₂O₃ thin film by furnace oxidation at high temperature in oxygen containing ambient. A vacuum-ultraviolet (Al_xGa_1-x)₂O₃ photodetector (PD) was also fabricated. It was found that external quantum efficiency of the fabricated PD measured at 220 nm was 30%. It was found that the fabricated PD exhibits extremely large deep-UV-to-visible rejection ratio.

Keywords

aluminium compounds; gallium compounds; metal-semiconductor-metal structures; nitrogen compounds; photodetectors; semiconductor epitaxial layers; (Al_xGa_1-x)₂O₃; AlGaN; epitaxial layer; external quantum efficiency; furnace oxidation; metal-semiconductor-metal VUV photodetector; size 220 nm; thin film; vacuum-ultraviolet photodetector; Aluminum gallium nitride; Current measurement; Furnaces; Gallium; Gallium nitride; Photodetectors; Photonic band gap; ${({rm Al}_{rm x}{rm Ga}_{1-{rm x}})}_{2}{rm O}_{3}$ ; ${rm Ga}_{2}{rm O}_{3}$; UV photodetectors;

fLanguage

English

Journal_Title

Sensors Journal, IEEE

Publisher

ieee

ISSN

1530-437X

Type

jour

DOI

10.1109/JSEN.2011.2104947

Filename

5682369

An Metal-Semiconductor-Metal VUV Photodetector

Weng, W.Y. ; Hsueh, T.J. ; Chang, S.J. ; Hung, S.C. ; Huang, G.J. ; Hsueh, H.T. ; Huang, Z.D. ; Chiu, C.J.

jour

An ${({\\rm Al}_{\\rm x}{\\rm Ga}_{1-{\\rm x}})}_{2}{\\rm O}_{3}$ Metal-Semiconductor-Metal VUV Photodetector