DocumentCode :
1421986
Title :
Room-temperature CW laser operation at ~1.55 μm (eye-safe range) of Yb:Er and Yb:Er:Ce:Ca2Al2SiO7 crystals
Author :
Simondi-Teisseire, Béatrice ; Viana, Bruno ; Lejus, Anne-Marie ; Benitez, Jean-Marie ; Vivien, Daniel ; Borel, Corinne ; Templier, Roselyne ; Wyon, Christophe
Author_Institution :
Lab. de Chimie Applique de l´´Etat Solide-ENSCP, Paris, France
Volume :
32
Issue :
11
fYear :
1996
fDate :
11/1/1996 12:00:00 AM
Firstpage :
2004
Lastpage :
2009
Abstract :
Room-temperature CW laser operation at 1.55 μm of Yb:Er:Ca2Al2SiO7 (CAS) single crystal pumped at 940 nm and 975 nm has been achieved for the first time. Introduction of a third doping ion, Ce3+, decreases the Er 3+4I11/2 excited-state lifetime and improves the laser properties. For Yb:Er:Ce:CAS single crystal, a maximum of 20 mW output power is produced for 285 mW absorbed power. With this material, a low threshold of 20 mW and a relatively high slope efficiency of ~5.5% are obtained. Preliminary results indicate possible improvement in the near future. Experimental threshold values and laser properties of CAS crystals with various compositions are in good agreement with calculations, performed using the rate-equations modeling. Comparison with a Yb:Er:phosphate glass laser is also presented
Keywords :
calcium compounds; cerium; crystals; erbium; infrared sources; laser transitions; optical pumping; safety; solid lasers; ytterbium; 1.55 mum; 20 mW; 285 mW; 5.5 percent; 940 nm; 975 nm; Ca2Al2SiO2:Yb,Er; Ca2Al2SiO2:Yb,Er,Ce; Ce3+; Er3+4I11/2 excited-state lifetime; Yb,Er,Ce:Ca2Al2SiO7 crystal lasers; Yb,Er:Ca2Al2SiO7 crystal lasers; Yb:Er:phosphate glass laser; eye-safe range; high slope efficiency; laser properties; mW absorbed power; mW output power; rate-equations modeling; room-temperature CW laser operation; single crystal; third doping ion; threshold values; Content addressable storage; Crystalline materials; Crystals; Doping; Erbium; Laser excitation; Laser modes; Optical materials; Power generation; Pump lasers;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.541688
Filename :
541688
Link To Document :
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