Frequency Tuning in Integrated InGaAsP/InP Ring Mode-Locked Lasers

Author

Parker, John S. ; Binetti, Pietro R A ; Hung, Yung-Jr ; Coldren, Larry A.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA

Volume

30

Issue

9

fYear

2012

fDate

5/1/2012 12:00:00 AM

Firstpage

1278

Lastpage

1283

Abstract

We demonstrate for the first time, continuous frequency tuning >;40 MHz using symmetric phase tuning regions in an InGaAsP/InP 18 GHz passively mode-locked ring laser. Frequency tuning is achieved through current injection into passive waveguides, via the free-carrier plasma effect, which is enhanced by the concurrent increase in cavity losses from free-carrier absorption. Stable mode-locking with ~1 ps pulse-width is realized from -2.5 to -7.5 V bias on the saturable absorber and 170 to 290 mA drive current. The average RF power is 50 dB above the noise level over this regime.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser mode locking; laser noise; laser tuning; optical saturable absorption; ring lasers; semiconductor lasers; InGaAsP-InP; cavity losses; current 170 mA to 290 mA; current injection; free-carrier absorption; free-carrier plasma effect; frequency 18 GHz; frequency tuning; integrated ring mode-locked lasers; noise level; passive waveguides; saturable absorber; symmetric phase tuning regions; voltage -2.5 V to -7.5 V; Directional couplers; Laser mode locking; Optical variables measurement; Optical waveguides; Radio frequency; Ring lasers; Tuning; Mode-locked laser; pulsed lasers; quantum well laser; ring laser; semiconductor laser;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/JLT.2012.2184264

Filename

6130561