Title :
Modeling boron diffusion in thin-oxide p/sup +/ Si gate technology
Author :
Fair, Richard B. ; Gafiteanu, Roman A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Duke Univ., Durham, NC, USA
Abstract :
A network defect model suitable for use in process simulation is presented for the diffusion of B in SiO/sub 2/ and, in particular, B in the presence of F and H/sub 2/. We find that B diffuses via a peroxy linkage defect the concentration in the oxide of which changes under different processing conditions. From random walk theory it is possible then to calculate the resulting diffusion coefficients. These results are compared with measured diffusivities and empirical adjustments are made.
Keywords :
boron; diffusion; semiconductor process modelling; silicon compounds; Si-SiO/sub 2/:B; boron diffusion; network defect model; peroxy linkage defect; process simulation; random walk; thin-oxide p/sup +/ Si gate technology; Bonding; Boron; Chemicals; Couplings; Intelligent networks; Mechanical engineering; Oxidation; Process design; Scattering; Temperature dependence;
Journal_Title :
Electron Device Letters, IEEE
