Improved BRT structures fabricated using SIMOX technology

Author

Sridhar, S. ; Baliga, B.J.

Author_Institution

Power Semicond. Res. Center, North Carolina State Univ., Raleigh, NC, USA

Volume

17

Issue

11

fYear

1996

Firstpage

512

Lastpage

514

Abstract

The SIMBRT is a new power device in which SIMOX technology is used to isolate the P-channel turnoff MOSFET resulting in improved cathode injection efficiencies and higher maximum controllable current densities when compared to the conventional BRT. In this paper, experimentally measured characteristics on four novel SIMBRT structures fabricated using a 9-mask SIMOX smart power process are presented, and their performance is compared with conventional BRT structures fabricated alongside. The lowest on-state voltage drop and highest maximum controllable current density are demonstrated to occur for the structure with the smallest cell pitch.

Keywords

MOS-controlled thyristors; SIMOX; isolation technology; masks; power integrated circuits; BRT structures; P-channel turnoff MOSFET isolation; SIMBRT; SIMOX technology; base resistance controlled thyristor; cathode injection efficiencies; cell pitch; gate controlled turnoff; maximum controllable current densities; on-state voltage drop; power device; smart power process; Anodes; Cathodes; Current density; FETs; Insulated gate bipolar transistors; Isolation technology; MOSFET circuits; Power measurement; Thyristors; Voltage control;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.541765

Filename

541765