Title :
Optimizing polysilicon thin-film transistor performance with chemical-mechanical polishing and hydrogenation
Author :
Chan, Alice B Y ; Nguyen, Cuong T. ; Ko, Ping K. ; Man Wong ; Kumar, Anish ; Sin, Johnny ; Wong, Man
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, Hong Kong
Abstract :
Chemical-mechanical polishing and hydrogen passivation were jointly used to improve the electrical characteristics of polycrystalline-Si thin-film transistors (poly-Si TFT´s). It was found that each treatment affects the devices differently; polishing is more effective in smoothing the poly-Si/SiO/sub 2/ interface while hydrogenation is more effective in passivating the grain boundaries. Their effects are additive. Hence, optimal device performance was achieved by combining both treatments.
Keywords :
elemental semiconductors; grain boundaries; passivation; polishing; silicon; thin film transistors; Si-SiO/sub 2/; chemical-mechanical polishing; electrical characteristics; grain boundaries; hydrogenation; optimal device performance; passivation; polysilicon thin-film transistor; Annealing; Chemical technology; Electric variables; Grain boundaries; Planarization; Rough surfaces; Silicon compounds; Surface morphology; Surface roughness; Thin film transistors;
Journal_Title :
Electron Device Letters, IEEE
