Different dependence of band-to-band and Fowler-Nordheim tunneling on source doping concentration of an n-MOSFET

Author

Tang, Yuan ; Chen, Jian ; Chang, Chi ; Liu, David ; Haddad, Sameer ; Sun, Yu ; Wang, Arthur ; Ramskey, Mark ; Kwong, Ming ; Kinoshita, Hiroyuki ; Chan, Wei-Han ; Lien, Jih

Author_Institution

Adv. Micro Devices Inc., Sunnyvale, CA, USA

Volume

17

Issue

11

fYear

1996

Firstpage

525

Lastpage

527

Abstract

As the value of the maximum source doping concentration in the gate/source overlap area of an n-channel MOSFET (N/sub dmax/) varies, it has been observed that the edge Fowler-Nordheim (FN) tunneling through the gate oxide in the overlap area is changed significantly. In contrast, the N/sub dmax/ variation has little impact on band-to-band tunneling current (I/sub BB/) induced in the same overlap area. We attribute the independence of I/sub BB/ on N/sub dmax/ to the inhibition of band-to-band tunneling at the N/sub dmax/ location where silicon band bending becomes less than 1.1 eV resulting from increase of source doping concentration N/sub d/ beyond /spl sim/1.6/spl times/10/sup 19/ cm/sup -3/ (this value depends on the device used and its bias condition).

Keywords

MOSFET; doping profiles; semiconductor device reliability; semiconductor doping; tunnelling; Fowler-Nordheim tunneling; Si; band bending; band-to-band tunneling; bias condition; gate/source overlap area; n-channel MOSFET; source doping concentration; CMOS technology; Doping profiles; EPROM; Energy states; MOSFET circuits; Neodymium; Poisson equations; Silicon; Sun; Tunneling;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.541769

Filename

541769