Title :
11.6 Gbps 1:4 demultiplexer using double pulse doped quantum well GaAs/AlGaAs transistors
Author :
Lang, M. ; Nowotny, U. ; Berroth, M.
Author_Institution :
Fraunhofer Inst. fur Angewandte Festkorperphys., Freiburg, Germany
Abstract :
An ultrahigh speed 4 bit demultiplexer circuit has been developed and fabricated using a recessed gate process for enhancement and depletion transistors with 0.3 mu m gate length. First results show a data rate of 11.6 Gbit/s and a power consumption of 165 mW at 0.85 V supply voltage, including four 50 Omega buffers.
Keywords :
III-V semiconductors; aluminium compounds; field effect integrated circuits; field effect transistors; gallium arsenide; integrated logic circuits; semiconductor quantum wells; 0.3 micron; 0.85 V; 11.6 Gbit/s; 165 mW; 4 bits; GaAs-AlGaAs; buffers; data rate; demultiplexer circuit; depletion transistors; double pulse doped quantum well transistors; enhancement transistors; power consumption; recessed gate process; ultrahigh speed;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910289
